Liquid crystal display

ABSTRACT

A light-emitting device including a light-spreading device having a wing-shaped protrusion part, a light-entering surface that includes an uneven surface, and a recess located away from the light-entering surface; an optoelectronic device disposed under the uneven surface and emitting light towards the light-entering surface; and a wavelength-converting material formed on a path along light traveling from the optoelectronic device. The device may additionally include a liquid crystal layer for controlling light flux from the light-spreading device; a color filter layer including a plurality of pixels provided adjacent to the liquid crystal layer. The device may be a liquid crystal display having a backlight module, a liquid crystal layer, and a color filter layer. An ultraviolet unit for emitting ultraviolet light may be disposed in the backlight module. At least one pixel may be filled with a wavelength-converting material that can convert ultraviolet light into green light.

This is a Divisional of U.S. application Ser. No. 11/233,039, filed Sep.23, 2005 now U.S. Pat. No. 7,724,321, and allowed on Jan. 25, 2010, thesubject matter of which is incorporated herein by reference.

RELATED APPLICATIONS

The present application claims the right of priority based on TaiwanApplication Serial Number 093129157, filed Sep. 24, 2004; TaiwanApplication Serial Number 094103538, filed Feb. 4, 2005; TaiwanApplication Serial Number 094114630, filed May 6, 2005; TaiwanApplication Serial Number 094121784, filed Jun. 29, 2005; and TaiwanApplication Serial Number 094128643, filed Aug. 22, 2005, the disclosureof which is incorporated herein by reference in their entirety.

FIELD OF THE INVENTION

The present invention relates to a liquid crystal display (LCD)comprising a color filter layer and a backlight module, the backlightmodule comprising an ultraviolet unit, the color filter layer comprisinga wavelength-converting material able to absorb the ultraviolet lightemitted from the ultraviolet unit and emit green light.

BACKGROUND OF THE INVENTION

A liquid crystal display belongs to a non-self emitting display, andthus light emitting device is needed to act as a light source. Such alight emitting device is generally called a backlight module. Backlightmodules are commonly divided into two types: a direct-light type and anedge-light type. The conventional backlight module uses a lamp tube suchas a cold cathode florescent lamp (CCFL) as a light source. However, theCCFL fails to regenerate the real colors of objects due to the low colorrendering index (CRI).

For better color rendering, a light-emitting diode (LED) is deemed abetter solution for the light source of backlight module in the comingmarket. LEDs offer benefits such as small size, low power consumption,fast response time, long operating time, and durability, etc. A colorfilter is usually used in the LCD for separating the three primarycolors, i.e. red, blue and green from the white light. Mixing the threeprimary colors in different percentages may create various desiredcolors.

There are several methods of forming white light by LEDs. (1) A blue LEDused with a yellow phosphor, commonly yttrium-aluminum-garnet (YAG)phosphor, is one of the most popular measures forming white light.However, this type of white light is formed by mixing blue light withyellow light, and the spectrum thereof is mainly shown at twowavelengths of 460 nm and 550 nm, i.e. this type of while light lacks ofred and green lights, and thus a LCD adopting this type of white lightfails to show real color of object. (2) A blue LED is used to excite thered and green phosphors for generating red and green lights. The redlight, the green light, and the blue are mixed to form white light.However, there is serious crosstalk among the red, blue and green colorsgenerated by this method, i.e. the bandwidths of the red, blue and greencolors are overlapped. (3) A ultraviolet. LED is used to excite three ormore phosphors for generating three colors of red, blue and green. Thismethod also causes serious crosstalk. (4) Three separate red, blue andgreen LEDs are used to generate white light. The white light made bythis method can achieve NTSC 105% or more, which is 1.5 times higherthan the conventional CCFL. However, due to the different illuminationefficiencies of different colors LEDs, different numbers of the red,blue and green LEDs are required for practical application. Generallyspeaking, the efficiency of green LED is poorer, and thus more greenLEDs are needed to balance with the light amount generated from othercolored LEDs. However, the more LEDs the higher cost rises, and morespace needs for accommodating the LEDs.

SUMMARY OF THE INVENTION

A liquid crystal display (LCD) of the present invention comprises abacklight module including an ultraviolet unit; a liquid crystal layerused for controlling light flux emitted from the backlight module; and acolor filter layer comprising a plurality of pixels and awavelength-converting material formed on one of the pixels, wherein thewavelength-converting material emits green light after being irradiatedby the ultraviolet unit.

The backlight module further comprises a red-light unit and a blue-lightunit, and preferably, at least one of the ultraviolet unit, thered-light unit and the blue-light unit is a light-emitting diode (LED).

The filter layer preferably has a reflection layer used for reflectingthe specific light from the backlight module. Preferably, the colorfilter layer comprises a distributed bragg reflector (DBR) used forreflecting the light from the backlight module.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing aspects and some attendant advantages of this inventionwill become more readily appreciated as the same becomes betterunderstood by reference to the following detailed description, whentaken in conjunction with the accompanying drawings, wherein:

FIG. 1 is a schematic diagram illustrating an embodiment of the presentinvention;

FIGS. 2 a to 2 e are schematic diagrams respectively illustrating alight-spreading device and an optically-conditioning surface inaccordance with the embodiment of the present invention; and

FIGS. 3 a and 3 b are schematic diagrams illustrating the compositionsof a semiconductor light-emitting element assembly in accordance withthe embodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT First Embodiment

FIG. 1 is a schematic diagram illustrating the structure of a LCD 10 ofthe present invention. Some components of the LCD 10 are omitted forclarity in FIG. 1.

The LCD 10 comprises a backlight module 11 acting as a light source tothe LCD 10. Since the LCD 10 shows the image displayed in the visiblewavelength range to a user, the backlight module 11 generally has to alight source in the visible wavelength range. The backlight module 11generally has to provide white light, and the white light is preferablygenerated by the three primary colored light emitted from red, blue andgreen LEDs.

To increase the illumination efficiency of green light, the backlightmodule 11 of the present invention uses an ultraviolet emitter, such asan ultraviolet unit 1101, preferably, an ultraviolet LED, and awavelength-converting material 1402 (labeled as P) which can absorbultraviolet light to generate green light. The wavelength of theultraviolet light herein is between 10 nm-420 nm, and preferably between200 nm-420 nm. White light can be formed by mixing red light emittedfrom a red-light unit 1102, blue light emitted from a blue-light unit1103, and green light emitted from the wavelength-converting material1402 radiated by the ultraviolet unit 1101. The red-light unit 1102 andthe blue-light unit 1103 includes by not limited to LEDs, florescentlamps, incandescent lamps and halogen lamps.

The wavelength-converting material 1402 is such as a phosphor able tobeing excited by the ultraviolet light emitted from the ultraviolet unit1101 to generate green light. If the wavelength of the ultraviolet lightfrom the ultraviolet unit 1101 ranges between 200 nm and 420 nm,preferably between 360 nm and 400 nm, the wavelength-converting material1402 can use an alkaline earth metal silicate phosphor, and preferablyan europium(Eu) activated alkaline earth metal silicate phosphor. Thecomposition of the europium(Eu) activated alkaline earth metal silicatephosphor is (SrBaMg)₂SiO₄:Eu. The FWHM (Full Width Half Maximum) of thelight generated by such a phosphor is smaller than 35 nm and that ofgreen light emitted by InGaN LEDs. The europium(Eu) activated alkalineearth metal silicate phosphor is available from the commercial productsfabricated by Intematix Corporation, California, USA, such asG400™/G380™/G360™ series.

Other phosphors that can be excited by UV light and emits green light issuch as (Ba_(1-x-y-z)Ca_(x)Sr_(y)Eu_(z))₂(Mg_(1-w)Zn_(w))Si₂O₇, whereinx+y+z=1, 0.05>z>0 and w<0.05; Ca₈Mg(SiO₄)₄Cl₂:Eu,Mn; Ba₂SiO₄:Eu;Ba₂MgSiO₇Eu; BaAl₂O₄Eu; SrAl₂O₄:Eu; and BaMg₂Al₁₆O₂₇:Eu, etc., whereinthe excited wavelength thereof is 330 nm-420 nm.

The numbers of the ultraviolet unit 1101, the red-light unit 1102 andthe blue-light unit 1103 depends on the factors including but notlimited to the size of the LCD 10, the brightness required by the LCD10, the lighting intensity of each of the units 1101, 1102 and 1103, andthe optical design inside the backlight module 11. The red, blue, andgreen (violet) LEDs can be arranged in a sequence includingred-blue-green (violet), red-green (violet)-blue, blue-green(violet)-red, blue-red-green (violet), green (violet)-red-blue, green(violet)-blue-red, red-blue-green (violet)-red and red-green(violet)-blue-red.

In the present embodiment, since the ultraviolet light is invisible tohuman eyes, the mixture light 12 emitted from the backlight module 11merely shows the light formed by mixing the red light with the bluelight, i.e. the light in purple-red series.

A liquid crystal layer 13 comprises a liquid crystal material and a thinfilm transistor (TFT) layer. When a bias is applied to the TFT layer,the liquid crystal molecules will be tilted or rotated and accordinglythe light flux of the mixture light 12 passing through the liquidcrystal layer changed.

The mixture light 12 passes through the liquid crystal layer 13 andreaches a color filter layer 14. The color filter layer 14 generally isformed on a glass substrate and comprises a plurality of pixels 1401(labeled as R, P, B in FIG. 1). A pixel set is usually formed by atleast three single color pixels for separating red, blue, and greenlight from the mixture light 12.

In the present embodiment, the wavelength-converting material 1402 isdisposed inside one pixel (hereinafter is called a green pixel P) in onepixel set. The wavelength-converting material 1402 is excited by theultraviolet light emitted from the ultraviolet unit 1101 and generatesgreen light (G). The other two pixels in one pixel set are a red pixel(R) and a blue pixel (B). The red and blue pixels may be formed byorganic material. The red pixel (R) permits only the red light of themixture light 12 passing, while the blue pixel (B) permits only the bluelight of the mixture light 12 passing. Consequently, the red pixel (R)displays red color, and the blue pixel (B) displays blue color.

Besides organic materials, the red pixel (R) and the blue pixel (B) alsocan be formed from the phosphors that can be excited by UV light to emitred light and blue light. The phosphors that can be excited by UV lightto emit red light are such as Y₂O₂S:Eu,Bi; Y₂O₃S:Eu,Bi; and 3.5 MgO.0.5MgF₂.GeO₂:Mn⁺⁴, wherein the excited wavelength thereof is 330 nm-420 nm.The phosphors that can be excited by UV light to emit blue light aresuch as BaMg₂Al₁₆O₂₇:Eu; (SaBaCa)₅ (PO₄)₃Cl:Eu; and Sr₄Al₁₄O₂₅:Eu,wherein the excited wavelength thereof is 220 nm-330 nm.

Each of the pixels permits only a portion of white light passing, inother hand, the amount of light passing exiting the pixels is less thanthat entering the pixels due to the other portion of light beingabsorbed by the pixels, and accordingly light-output efficiencydecreases. In order to raise the light-output efficiency, a DBR 1404 isformed in front of the filtering layer 1401 for reflecting the light ina selected wavelength. For example, in front of the red pixel (R), a DBRlayer that can reflect blue light or ultraviolet light is formed forpreventing the blue light or the ultraviolet light from being absorbedby the red pixel (R) and reflecting the blue light or the ultravioletlight so as to enter the blue pixel (B) or the green pixel (P). As tothe other pixels, the corresponding DBRs may be used. Besides, sinceultraviolet light is reflected by the DBR 1404, the ultraviolet lightcan be prevented from emitting the LCD 10.

Further, the LCD 10 may also comprise other optical films, such as aprism sheet, a diffuser and a polarizer, etc., wherein the prism sheetand the diffuser is generally disposed in the backlight module 11 forunifying the light emitted from the light-emitting units 1101-1103 so asto generate the desired mixture light 12. The polarizer is generallyused with the liquid crystal layer 13, so that the mixture light 12 ispolarized before entering the liquid crystal 13.

Although the method of using ultraviolet light to excite thewavelength-converting material 1402 for generating green light canincrease the green light output efficiency, yet some components insidethe LCD 10, particularly the plastic components such as the prism sheet,the diffuser and the polarizer, etc., are easily deteriorated due toultraviolet irradiation. Hence those optical films or plastic componentsare preferably made of ultraviolet resistant material.

Other technical references related to the present invention, such asUS2005/0001537A1, US2004/0061810A1, U.S. Pat. No. 6,686,691, U.S. Pat.No. 6,791,636, U.S. Pat. No. 6,844,903, U.S. Pat. No. 6,809,781, U.S.Pat. No. 6,252,254, U.S. Pat. No. 6,255,670, U.S. Pat. No. 6,278,135,U.S. Pat. No. 6,294,800, EP1138747, WO0189000 and WO0189001, are listedherein for reference.

Second Embodiment

The backlight module disclosed in the present embodiment comprises alight-spreading device 15 and/or an optically-conditioning surface 16having a wavelike array for guiding, mixing and/or spreading the lightgenerated from each of the light-emitting units 1101-1103 towards theliquid crystal layer 13, such as shown in FIG. 2 a.

Such as shown in FIG. 2 b, the light-spreading device 15 has awing-shaped protrusion part 1501, a recess 1502 and a light-enteringsurface 1503. The light-spreading device 15 is formed in a longitudinaldirection 1504. The recess 1502 is located away from the light-enteringsurface 1503, and preferably is located on the side opposite to thelight-entering surface 1503. A first wavelike array 1601 is formed onthe light-conditioning surface 16 for diffusing and/or mixing the lightemitted from the ultraviolet unit 1101, the red-light unit 1102 and/orthe blue unit 1103, thereby preventing the backlight module 11 fromgenerating light spots or showing unmixed colored light. A portion ofthe light passing through the light-entering surface 1503 of thelight-spreading device 15 is total-internal-reflected on the recess 1502to both sides thereof, i.e. to the wing-shaped protrusion part 1501, andanother portion of the light passing through the recess 1502 may berefracted in compliance with the Snell's law due to the difference ofthe refractive indexes between the light-spreading device 15 and theambient optical medium. Since a portion of the light istotal-internal-reflected in the recess 1502 and directed to thewing-shaped protrusion part 1501, the light flux emitting from therecess 1502 is reduced. Preferably, the shape of the recess 1502 issimilar to a V-shape or U-shape. The light inside wing-shaped protrusionpart 1501 may be refracted, reflected or directly exit out of thelight-spreading device 15. For example, the light entering thelight-spreading device 15 at a specific angle will be gradually mixed asuniform colored light after several times of total reflection inside thewing-shaped protrusion part 1501. The light-entering surface 1503 is notlimited to a planar surface, but also can be a concave shape or othershapes able to receive light.

A first wavelike array 1601 may be formed on the optically-conditioningsurface 16, and both of the optically-conditioning surface 16 and thefirst wavelike array 1601 may be formed on the light-entering surface1503 of the light-entering surface 1503. The first wavelike array 1601is a wave-shaped surface. The wave-shaped surface has a wave propagationdirection, i.e. the array direction or wavefront direction of the firstwavelike array 1601. The wave structures formed on the first wavelikearray 1601 may be a plurality of micro-lenses. Light through themicro-lenses is blurred. The diameter of each micro-lens is about 50-60μm. If the waves of the first wavelike array 1601 are constructedconsecutively, a distance between two consecutive wave peaks or troughsis about between 100 μm and 120 μm.

The optically-conditioning surface 16 may optionally be formed insidethe light-spreading device 15 by combining two light-pervious materialswith different refractive indexes. The wavelike array is then formed onthe interface of the two light-pervious materials, such as shown in FIG.2 c. The hatched portion has a material different from the otherportion's. The first wavelike array 1601 is not limited to beingdisposed on the light-entering surface 1503, but also can be disposed onthe wing-shaped protrusion part 1501 or/and the recess 1502, such asshown in FIG. 2 e.

The material forming the light-spreading device 15 is such as acrylicresin, cyclo-olefin co-polymer (COC), polymethyl-methacrylate (PMMA),polycarbonate (PC), polyetherimide, fluorocarbon polymer, silicone, thecombinations thereof, or other light-pervious material.

As shown in FIG. 2 d, the optically-conditioning surface 16 may also beformed on an optical film 17 having a first surface 1701 and a secondsurface 1702 opposite to the first surface 1701. Theoptically-conditioning surface 16 is formed on one of the first surface1701 and the second surface 1702. If the optically-conditioning surface16 is formed on the first surface 1701, the first wavelike array 1601 isthen formed on the first surface 1701. The optical film 17 can beinstalled above the light-spreading device 15 or the area between thelight-spreading device 15 and the light-emitting units 1101-1103.Further, a second optically-conditioning surface 18 can be formed on thesecond surface 1702, and a second wavelike array 1801 is formed on thesecond optically-conditioning surface 18. The array direction of thesecond wavelike array 1801 is different from that of the first wavelikearray 1601. In that case, a Moiré pattern can be formed by stacking thefirst wavelike array 1601 and the second wavelike array 1801 havingdifferent array directions. By properly adjusting the first wavelikearray 1601 and the second wavelike array 1801, the intensity of thelight passing through the Moiré pattern can be re-distributed, therebyachieving the performance of scattering the light uniformly. The opticalfilm 17 may be available from the product manufactured by S-Light OptElectronics Inc., Taiwan.

The optically-conditioning surface 16 or 18 is not limited to beingmerely disposed on one of the light-spreading device 15 and the opticalfilm 17, but also can be formed on both of the light-spreading device 15and the optical film 17. The first wavelike array 1601 and the secondwavelike array 1801 can have the same or different wave sizes, waveshapes and wave frequencies.

If the arrangement direction of the light-emitting units 1101, 1102and/or 1103 is parallel to the array direction of the first wavelikearray 1601, i.e. to the wavefront direction thereof, a light patternsubstantially parallel to the wavefront direction of the first wavelikearray 1601 will be generated after the light passes through the firstwavelike array 1601. When the arrangement direction of the light sources1101, 1102 and/or 1103 and the wavefront direction of the first wavelikearray 1601 are formed in straight lines, the light will be distributedas straight lines; when the arrangement direction of the light sources1101, 1102 and/or 1103 and the wavefront direction of the first wavelikearray 1601 are formed in curved or radiating patterns, the light will bedistributed as curved or radiating patterns. Theoretically, when thearrangement direction of the light sources 1101, 1102 and/or 103 isparallel or about parallel to the wavefront direction of the firstwavelike array 1601, the light emitted from the light sources 1101, 1102and/or 1103 is distributed into the light pattern extending along thewavefront direction.

The detailed techniques of the light-spreading device and the wavelikearray have been described in Taiwan Application Serial Number 093129157and Taiwan Application Serial Number 094114630, which are listed hereinfor reference.

Third Embodiment

In the present embodiment, the light-emitting units are semiconductorlight-emitting elements, such as LEDs, and preferably LED dies. With thepower increasing, the heat generated from LEDs also increasesaccordingly. For providing heat dissipation for the LEDs, the presentinvention installs the ultraviolet unit 1101, the red-light unit 1102and/or the blue-light unit 1103 on a composite substrate 1901, such asshown FIG. 3 a. 19 indicates a semiconductor light-emitting elementassembly, such as a LED package; 1901 indicates a composite substrate;1902 indicates a connecting structure; 1903 indicates a circuit layoutcarrier; 1904 indicates an electrical contact; and 1905 indicates aconductive wire.

The circuit layout carrier 1903 is bonded to a composite substrate 1901through a connecting structure 1902. The ultraviolet unit 1101, thered-light unit 1102 and/or the blue-light unit 1103 are fixed in arecess 1906. Conductive wires 1905 or other electrically connectingmeans are used to connect the ultraviolet unit 1101, the red-light unit1102 and/or the blue-light unit 1103 to electrical contacts 1904 formedon the circuit layout carrier 1903. The difference between the thermalexpansion coefficient of the light-emitting units 1101-1103 and that ofthe composite substrate 1901 is approximately smaller than or equal to10×10⁻⁶/° C., thus the thermal stress between the light-emitting units1101-1103 and the composite substrate 1901 is reduced.

The thermal expansion coefficient of the LED die generally is between1×10⁻⁶/° C. and 10×10⁻⁶/° C. For example, the thermal expansioncoefficient of GaN is about 5.4×10⁻⁶/° C.; that of InP is about4.6×10⁻⁶/° C.; that of GaP is about 5.3×10⁻⁶/° C. In order to decreaseexcessive thermal stress formed between the light-emitting units1101-1103 and its contact material, a composite substrate 1901 is usedas the supporting base of the semiconductor light-emitting elementassembly 19. Besides, the composite substrate 1901 is also used as aheat-dissipation media. The thermal expansion coefficient of thecomposite substrate 1901 is preferably smaller than or equal to10×10⁻⁶/° C.

The composite material is usually formed from two or more materials, andthese two or more materials do not form any other molecular or atomicstructures. Generally speaking, the composite material can offer thebenefits of the separate materials and has physical properties betterthan that of the original materials. The composite material usually hasthe benefits of lightweight, high strength, and good thermal propertiesetc. The composite material includes a metal matrix composite (MMC), apolymer matrix composite (PMC), and ceramic matrix composite (CMC).These composites are respectively formed by mixing carbon fibers orceramic fibers with metals, polymers, and ceramics. The compositesubstrate 1901 preferably formed by the metal matrix composite with athermal conductivity coefficient not smaller than 150 W/mK and a thermalexpansion coefficient not greater than 10×10⁻⁶/° C., such as aluminummatrix composite (its thermal conductivity coefficient is about 100˜640W/mK; and its thermal expansion coefficient of the composite substrateis about 5˜10×10⁻⁶/° C.). Nonetheless, a polymer matrix composite andceramic matrix composite may also be used as the composite substrate1901.

The circuit layout carrier 1903 is, for example, a printed circuitboard, a flexible printed circuit, a semiconductor substrate such as aSi substrate or a ceramic substrate, etc. The semiconductor substrateused as the circuit layer carrier 1903 can use various semiconductorprocesses such as etching, sputtering etc. to form the desired circuitsthereon, and also can be integrated with the process for forming thesemiconductor light-emitting diode. The semiconductor substrate such asthe Si substrate has acceptable heat transfer properties (its thermalconductivity coefficient and thermal expansion coefficient are about 150W/mK and 4×10⁻⁶/° C. respectively). Since the thermal conductivitycoefficients and thermal expansion coefficients of a metal matrixcomposite substrate are close to those of s Si substrate, the thermalstress between the two kinds of materials can be effectively reduced andthe conductive efficiency can be further improved. Nonetheless, theprinted circuit board or the flexible printed circuit may also be used.

The circuit layout carrier 1903 is bonded to the composite substrate1901 through the connecting structure 1902. The connecting structure1902 is made of adhesive material, preferably a flexible adhesive layer.The flexible adhesive layer preferably preserves adhesion at a roomtemperature or a medium low temperature. The material forming theflexible adhesive layer includes but not limited to benzocyclobutene(BCB), epoxy, polyimide, SOG (Spin On Glass), silicone, solder,equivalents thereof and combinations thereof. Those flexible adhesivematerials can be cured at a relatively low temperature (commonly smallerthan 300° C.), thereby reducing the thermal stress between the compositesubstrate 1901 and the light-emitting units 1101-1103 and/or between thecomposite substrate 1901 and the circuit layout carrier 1903 at hightemperature, also lessening the damage to the light-emitting units1101-1103 at high temperature.

As shown in FIG. 3 b, the connecting structure 1902 is composed of aflexible adhesive layer 2001, and a reaction layer 2002 and/or areaction layer 2003. The flexible adhesive layer 2001 can be formed bythe material described above. The reaction layers 2002 and 2003 areformed respectively between the flexible adhesive layer 2001 and thecircuit layout carrier 1903; and/or between the flexible adhesive layer2001 and the composite substrate 1901, for enhancing the adhesionbetween the flexible adhesive layer 2001 and the circuit layout carrier1903 and/or the composite substrate 1901. The material forming thereaction layers 2002 and 2003 includes but not limited to siliconnitride (SiN_(x)), epoxy, titanium (Ti), chromium (Cr), or combinationsthereof. The reaction layer 2002 and/or the reaction layer 2003 can beformed on the circuit layout carrier 1903 and/or the composite substrate1901 by the method of physical vapor deposition (PVD) or chemical vapordeposition (CVD). The flexible adhesive layer 2001 may be formed on oneside of the circuit layout carrier 1903 and/or one side of the compositesubstrate 1901. The circuit layout carrier 1903 is bonded to thecomposite substrate 1901 at certain pressure and temperature, such as328 g/cm²-658 g/cm² and 150° C.-600° C., and preferably 505 g/cm² and200° C.-300° C.

If the surface of the composite substrate 1901 is a rough surface, aplanarizing layer 21 is formed on the surface of the composite substrate1901 for flatting the rough surface of the composite substrate 1901 andimproving the adhesion between the connecting structure 1902 and thecomposite substrate 1901. The material forming the planarizing layer 21is such as nickel (Ni) or any other materials adhesible to theconnecting structure 1902.

In the present embodiment, a wavelength-converting material 1402 coversthe area above the light-emitting units 1101, 1102 and/or 1103.Furthermore; a light-pervious member, such as a lens, is capped thewavelength-converting material 1402 for securing and/or protecting thewavelength-converting material 1402.

The wavelength-converting material 1402 may be mixed with light-perviousmaterial or other adhesive material and then is formed on thelight-emitting units 1101, 1102 and/or 1103. Alternatively, thewavelength-converting material 1402 may also be formed over the areaabove the light-emitting units 1101, 1102 and/or 1103 by sedimentationwithout the mixture of the light-pervious material or any adhesivematerial.

A reflection layer 22 may be optionally formed inside the recess 1906for reflecting and guiding the light emitted by the light-emitting units1101-1103. The reflection layer 22 is formed by a light-reflectionmaterial, such as gold, silver, aluminum, and tin etc. The reactionlayer 22 is formed on the partial or whole interior surface of therecess 1906 by using various known film deposition methods. Further, ifthe reflection layer 22 is electrical conductive, for keeping theinsulation between the light-emitting units 1101-1103 and the reflectionlayer 22, the reflection layer 22 is preferably not formed on the areaabove the light-emitting units 1101-1103 covering the compositesubstrate 1901. In addition, for enabling the reflection layer 22 toachieve better reflection efficiency, the recess 1906 is formed in atapered shape, i.e. the inner wall of the recess 1906 has a slope thatforms a funnel-shaped volume inside the recess 1906.

The detailed techniques of the light-spreading device and the wavelikearray have been described in Taiwan Application Serial Number 094103538,which is listed herein for reference.

As is understood by a person skilled in the art, the foregoing preferredembodiments of the present invention are illustrated of the presentinvention rather than limiting of the present invention. It is intendedto cover various modifications and similar arrangements included withinthe spirit and scope of the appended claims, the scope of which shouldbe accorded the broadest interpretation so as to encompass all suchmodifications and similar structures.

1. A light-emitting device, comprising: a light-spreading device having a wing-shaped protrusion part, a light-entering surface and a recess located away from the light-entering surface, wherein the light-entering surface comprises an uneven surface; an optoelectronic device disposed under the uneven surface, emitting light towards the light-entering surface, wherein the optoelectronic device further comprises: a composite substrate; a circuit layout carrier; and a connecting structure for bonding the composite substrate to the circuit layout carrier.
 2. The light-emitting device of claim 1, wherein the uneven surface further comprises a wavelike array formed in a wavefront direction.
 3. The light-emitting device of claim 1, wherein the optoelectronic device further comprises an ultraviolet emitter.
 4. The light-emitting device of claim 3, wherein the optoelectronic device further comprises a red-light emitter and a blue-light emitter.
 5. The light-emitting device of claim 4, wherein one of the ultraviolet emitter, the red-light emitter, and the blue-light emitter is a light-emitting diode.
 6. The light-emitting device of claim 1, wherein the uneven surface is extending in a longitudinal direction.
 7. The light-emitting device of claim 2, wherein the wavefront direction is substantially parallel to a longitudinal direction the uneven surface is extending.
 8. The light-emitting device of claim 7, wherein the optoelectronic device is arranged to substantially parallel to the wavefront direction.
 9. The light-emitting device of claim 3, wherein the circuit layout carrier is electrically connected to the ultraviolet emitter.
 10. The light-emitting device of claim 9, wherein the ultraviolet emitter and the circuit layout carrier are located on the same side of the composite substrate.
 11. The light-emitting device of claim 9, wherein the composite substrate comprises a material selected from a group consisting of a metal matrix composite (MMC), a polymer matrix composite (PMC), ceramic matrix composite (CMC), and combination thereof.
 12. The light-emitting device of claim 9, wherein the circuit layout carrier is selected from a group consisting of a semiconductor substrate, a printed circuit board (PCB), a flexible printed circuit (FPC), a Si substrate, a ceramic substrate and combination thereof.
 13. The light-emitting device of claim 9, wherein the connecting structure comprises a material selected from a group consisting of benzocyclobutene (BCB), epoxy, polyimide, SOG (Spin On Glass), silicone, solder, and combination thereof.
 14. The light-emitting device of claim 1, wherein the optoelectronic device further comprises a wavelength-converting material formed on a path along light traveling from the optoelectronic device.
 15. A light-emitting device, comprising: a light-spreading device having a wing-shaped protrusion part, a light-entering surface and a recess located away from the light-entering surface, wherein the light-entering surface comprises an uneven surface; an optoelectronic device disposed under the uneven surface, emitting light towards the light-entering surface; a liquid crystal layer for controlling a light flux from the light-spreading device; a color filter layer comprising a plurality of pixels adjacent to the liquid crystal layer; and a wavelength-converting material formed on a path along light traveling from the optoelectronic device, wherein the wavelength-converting material is formed on at least one of the plurality of pixels, and the wavelength-converting material emits a second light after irradiated by the light spreading device.
 16. The light-emitting device of claim 15, wherein the uneven surface further comprises a wavelike array formed in a wavefront direction.
 17. The light-emitting device of claim 15, wherein the optoelectronic device further comprises an ultraviolet light-emitting diode.
 18. The light-emitting device of claim 17, wherein the optoelectronic device further comprises a red light-emitting diode and a blue light-emitting diode.
 19. The light-emitting device of claim 16, wherein the wavefront direction is substantially parallel to a longitudinal direction the uneven surface is extending. 